Publication Type:

Conference Proceedings

Source:

10th Atomic Layer Deposition Conference, American Vacuum Society (2010)

Cite this Research Publication

P. Lehnen, Weber, U., Baumann, P. K., Senzaki, Y., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Reed, J., Czubatyj, W., Hudgens, S., and Dennison, C., “Void Free Gapfill and Phase Change Memory Device Characterization of GeSbTe Films Deposited Using Atomic Vapor Deposition”, 10th Atomic Layer Deposition Conference, American Vacuum Society. 2010.

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