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Preparation of Zinc Oxide Thin films by SILAR method and its Optical analysis

Publisher : Journal of Physics: Conference Series

Year : 2019

Abstract : ZnO thin films are promising material in multipurpose applications like solar cells and piezoelectric devices manufacturing, sensors applications etc. By tailoring its electrical and optical properties, its selection in different fields could be decided. So investigations of its optical parameters play key role in its chemical and physical analysis. Different methods of preparations are adopted for ZnO thin film synthesis for its specific uses. Here we selected Successive ion layer adsorption and reaction (SILAR) for ZnO film synthesis, which is a method preferred over ordinary chemical bath method. 0.025 molar ZnO thin films is prepared for 15 dip cycles and annealed for 450°C for 1 hour. The optical property of the prepared sample is investigated with UV visible and FTIR spectrometers. Thus obtained inferences of transmittance and absorbance is used to calculate parameters like absorption coefficient, extinction coefficient, band gap energy, refractive index and reflectance. It is observed that transmittance and absorbance show lower percentage over visible range. Band gap energy and refractive index is found to be comparable with the literature values. With these obtained values and due to the simplicity of the procedure, it is suggested that SILAR is a good method for ZnO thin film synthesis. © Published under licence by IOP Publishing Ltd.

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