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Simulation investigations of a pixelated metasurface absorber comprising CdTe, InAs, and InSb pixels for terahertz radiation

Publication Type : Conference Paper

Publisher : IEEE

Source : 2024 Control Instrumentation System Conference (CISCON)

Url : https://doi.org/10.1109/ciscon62171.2024.10696349

Campus : Amaravati

School : School of Engineering

Department : Electronics and Communication

Year : 2024

Abstract : A metasurface was designed for significant absorption of normally incident terahertz radiation in the spectral range of 2 to 8 THz. This metasurface comprises metaatoms featuring InSb-patched, InAs – patched, CdTe – patched, and unpatched pixels, strategically arranged on the illuminated face of a gold – backed polyimide substrate. Extensive simulations using commercial software have determined that the proposed metasurface design achieves remarkable maximum absorptance of 0.99, with a minimum absorptance of 0.95, within the frequency bands of 0.30893 – 0.59178 THz. The tuning capabilities of the proposed metasurface are characterized by an average tuning rate of 1.1 THz per Tesla (THzT-1) and a substantial dynamic range of 0.882 THz when subjected to a controlling magnetostatic field aligned parallel to the incident electric field. The incorporation of InSb, CdTe, and InAs patches proves vastly superior to using patches of only one of these materials.

Cite this Research Publication : Mohit Kumar Singh, V Chandana, P Nikitha, K Rakshitha, Simulation investigations of a pixelated metasurface absorber comprising CdTe, InAs, and InSb pixels for terahertz radiation, 2024 Control Instrumentation System Conference (CISCON), IEEE, 2024, https://doi.org/10.1109/ciscon62171.2024.10696349

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