Module I

Diode Fundamentals: Diode characteristics – Physics of diode operation and modeling of diodes. Diode applications: Rectifiers – Clipper and clamper circuits – Voltage multipliers – Voltage regulator using zener diode.

Module II

Field effect transistors: Introduction – Device structure and operation of JFET (Junction Field Effect Transistor) and MOSFETs – I-V characteristics of JFET and MOSFET – MOSFET applications – brief Analysis of MOS as a switch and as an amplifier, biasing, small signal analysis.

Module III

Single stage MOS amplifiers (CS, CD, CG), MOS capacitances – Low frequency and Miller effect – MOS high frequency model and amplifier frequency analysis, cut off frequency fα and fβ unity gain and Determination of bandwidth of single stage – MOSFET current sources, introduction current mirrors.

Module IV

Bipolar junction transistors: Introduction – Operation of BJT- I-V characteristics of BJT. BJT Applications: BJT biasing techniques – Analysis of BJT as a switch and as an amplifier (CE amplifier) – Small signal analysis.

Course Objectives

• To understand operation of semiconductor devices
• To understand DC analysis and AC models of MOSFET and BJT.
• To use MOSFET and BJT as switches and amplifiers

Course Outcomes

• CO1: Ability to understand diode characteristics and to design diode based circuits.
• CO2: Ability to understand the operation of MOSFET.
• CO3: Ability to design MOSFET based circuits.
• CO4: Ability to understand BJT.
• CO5: Ability to design and analyze BJT based circuits.

CO – PO Mapping

Textbook / Reference

• Sedra A and Smith K C, “Microelectronic circuits”, Sixth Edition, Oxford University Press, 2010.
• Neamen D A, “Electronic circuit analysis and design”, McGraw Hill, 2001.
• Boylestad R L and Nashelsky L, “Electronic devices and circuit theory”, Upper Saddle River N.J., Pearson/Prentice Hall, Tenth Edition, 2009.
• Millman J and C Halkias, “Integrated electronics”, second edition, McGraw –Hill, 2010

Evaluation Pattern 50:50 (Internal: External)