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Course Detail

Course Name Microwave Solid State Devices
Course Code 15ECE349
Program B. Tech. in Electronics and Communication Engineering
Year Taught 2019


Unit 1

Introduction to radio frequency transistors and diodes: Transit time effects – Silicon and GaAs material properties – Applications. Bipolar Transistors (BJT): Physical structure – Configuration – Operation – Amplification phenomena. Hetero junction BJT: Operational mechanism – Applications: Tunnel effect: Tunnel diodes and operation.

Unit 2

Field effect transistors (FET): Junction FET: Structure – Operation – I-V characteristics. Metal Semiconductor FET (MESFET): Structure – Operation – Cutoff and maximum oscillation Frequency. High electron mobility Transistors (HEMT): Structure – Operation and electronic applications. Metal oxide semiconductor FET: Maximum operation frequency – CMOS, NMOS Memory devices.

Unit 3

Transferred electron devices: Gunn effect – GaAs diode – Ridley’s Watkins Hilsum Theory – Negative resistance – Two valley model theory – High field domain – Modes of operation – Classification of modes – Limited space charge accumulation – LSA diodes – InP diodes. Avalanche transit time devices: Read diodes – IMPATT – TRAPATT – BARITT – Parametric devices. Monolithic microwave integrated circuits: Materials – Substrate: conductor, Dielectric – Resistive materials – MMIC fabrication techniques – MOSFET fabrication – Thin film formation – Hybrid integrated circuit fabrication.

Text Books

  1. Samuel. Y. Liao, “Microwave Devices and Circuits”, Pearson Education, Third Edition, 2004.


  1. Matthew. M. Radmanesh, “Radio Frequency and Microwave Electronics Illustrated”, Pearson Education, First Edition, 2006.
  2. R. Ludwig and P. Bretchko, “RF Circuit Design-Theory and Applications”, Pearson Education, First Edition, 2006.

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