VLSI Fabrication Technology

Unit 1

Brief History of Semiconductor technology, Scaling Trends and Scaling Methodologies, Scaling Challenges, ITRS Roadmap; Starting material, silicon structure and properties, Czochralski and Float Zone crystal growth, GaAs growth; Silicon oxidation methods and properties, Deal Grove Model, Photolithography – masks, pattern transfer techniques, minimum resolvable feature sizes, UV sources, photoresists.

Unit 2

Diffusion and ion implantation, Types of diffusion, Ficks laws, junction depth, Stopping mechanisms, Gaussian implantation profile, variations to predicted distribution, implantation damage and annealing; Deposition requirements and techniques – Physical and Chemical Vapor deposition, Epitaxial growth techniques; Wet and dry etching techniques, Etch requirements, Chemical Mechanical Polishing;

Unit 3

Interconnect Technology – Copper and Aluminum interconnects, Silicodes, Isolation, CMOS and BJT Process flow; CMOS process for sub-100nm era - dielectrics and gate electrodes, Low K Dielectrics with Cu, Strained silicon, Silicon Germanium, Process Techniques to overcome Short Channel Effects, Nanolithography techniques, SOI Technology, Ultra Shallow Junction. Multiple Gate MOSFETs.