'VLSI Fabrication Technology' is an elective course offered for the B. Tech. (Bachelor of Technology) in Electronics and Communication Engineering at School of Engineering, Amrita Vishwa Vidyapeetham.
Unit 1
Brief History of Semiconductor technology, Scaling Trends and Scaling Methodologies, Scaling Challenges, ITRS Roadmap; Starting material, silicon structure and properties, Czochralski and Float Zone crystal growth, GaAs growth; Silicon oxidation methods and properties, Deal Grove Model, Photolithography – masks, pattern transfer techniques, minimum resolvable feature sizes, UV sources, photoresists.
Unit 2
Diffusion and ion implantation, Types of diffusion, Ficks laws, junction depth, Stopping mechanisms, Gaussian implantation profile, variations to predicted distribution, implantation damage and annealing; Deposition requirements and techniques – Physical and Chemical Vapor deposition, Epitaxial growth techniques; Wet and dry etching techniques, Etch requirements, Chemical Mechanical Polishing;
Unit 3
Interconnect Technology – Copper and Aluminum interconnects, Silicodes, Isolation, CMOS and BJT Process flow; CMOS process for sub-100nm era - dielectrics and gate electrodes, Low K Dielectrics with Cu, Strained silicon, Silicon Germanium, Process Techniques to overcome Short Channel Effects, Nanolithography techniques, SOI Technology, Ultra Shallow Junction. Multiple Gate MOSFETs.
TEXTBOOKS
- Peter Van Zant, "Microchip Fabrication: A Practical Guide to Semiconductor Processing", McGraw- Hill Professional, Sixth Edition, 2014.
REFERENCES
- Gary. S. May and S. M. Sze, “Fundamentals of semiconductor fabrication”, John Wiley, First Edition, 2003.
- Marc J. Madou, “Fundamentals of Microfabrication and Nanotechnology - Volume II”, CRC Press, Third Edition, 2011.
- James D. Plummer, Michael D. Deal, Peter B. Griffin, “Silicon VLSI Technology: Fundamentals, Practice and Modeling”, Prentice Hall India Private Limited, 2000. Stephen Campbell, “Science of Microelectronic Fabrication”, Oxford University Press, 2001.
