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Effect of Drain Engineering on DC and RF Characteristics in Ge-source SD-ZHP-TFET

Publication Type : Conference Proceedings

Publisher : IEEE

Source : Devices for Integrated Circuit (DevIC)

Url :

Campus : Amaravati

School : School of Engineering

Year : 2021

Abstract : In this paper, a Ge-source is employed in split drain Z-shaped line TFET structure (SD-ZHP-TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the tunnel width at interface of channel-drain, which reduces the ambipolar current (I AMB ). Also, the horizontal pocket at source region and the Ge-source boost the ON current (I ON ) of the SD-ZHP-TFET. A comparative study in terms of transfer characteristic and current ratio (I ON /I OFF and I ON /I AMB ) among ZHP, SD-ZHP, and Ge-source SD-ZHP TFETs are highlighted through TCAD simulator. Furthermore, the impact of drain doping concentration of region 1 (N du ) and region 2 (N dl ) on transfer characteristic, I OFF , and I AMB are studied in proposed TFET. The Ge-source SD-ZHP-TFET provides I ON /I OFF and I ON /I AMB in the order of 10 9 and 10 11 , respectively. Finally, RF/analog parameters like transconductance (g m ) and cut off frequency (f c ) is evaluated for Ge-source SD-ZHP-TFET.

Cite this Research Publication : Saha, Rajesh, Deepak Kumar Panda, Rupam Goswami, Brinda Bhowmick, and Srimanta Baishya. "Effect of Drain Engineering on DC and RF Characteristics in Ge-source SD- ZHP-TFET." In 2021 Devices for Integrated Circuit (DevIC), pp. 517-520. IEEE, 2021. (Scopus )

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