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Interfacial Layer Formation during High-Temperature Deposition of Sm-Co Magnetic Thin Films on Si (100) Substrates

Publication Type : Journal Article

Publisher : Elsevier

Source : Intermetallics 2019, 106, 36–47.

Url :

Campus : Amritapuri

School : School for Sustainable Futures

Year : 2019

Abstract : The interfacial layer that has formed during the deposition of ∼240-nm thick Sm-Co films on the bare Si (100) substrate was investigated at different deposition temperatures, Td,Sm-Co: 400, 450 and 500 °C with respect to structural and magnetic properties of Sm-Co films. X-ray diffraction analysis showed the crystallization of both Sm2Co17(R) and SmCo5(H) magnetic phases. Rutherford back scattering studies demonstrated that the surface-diffusion reactions between the Sm-Co layer and Si-surface not only accompanied by the quasi-layered growth of CoSi2-phase; but also led to the formation of SmCoSi2-phase. Cross-sectional transmission electron microscopy analysis revealed uneven boundary with deeply grown CoSi2-layer and Moiré fringes at limited regions of Co/Si interface. Magnetic measurements showed a square hysteresis loop with maximum values of coercivity (11.6 kOe) and remanence ratio (0.99) for the films grown at 500 °C. Magnetic force microscopy images depicted patch-like domains with increasing phase contrast against Td,Sm-Co. In addition, the changes that has occurred in the magnetization reversal processes accompanied by coercivity enhancement due to higher Td,Sm-Co is discussed in the context of domain morphology and first-order reversal curves.

Cite this Research Publication : Saravanan, P.; Boominathasellarajan, S.; Sobel, B.; Wacławek, S.; Vinod, V. T. P.; Talapatra, A.; Mohanty, J.; Černík, M. "Interfacial Layer Formation during High-Temperature Deposition of Sm-Co Magnetic Thin Films on Si (100) Substrates". Intermetallics 2019, 106, 36–47.

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