Publication Type : Journal Article
Publisher : Elsevier
Source : Intermetallics 2019, 106, 36–47. https://doi.org/10.1016/j.intermet.2018.12.007.
Url : https://www.sciencedirect.com/science/article/abs/pii/S0966979518308161
Campus : Amritapuri
School : School for Sustainable Futures
Year : 2019
Abstract : The interfacial layer that has formed during the deposition of ∼240-nm thick Sm-Co films on the bare Si (100) substrate was investigated at different deposition temperatures, Td,Sm-Co: 400, 450 and 500 °C with respect to structural and magnetic properties of Sm-Co films. X-ray diffraction analysis showed the crystallization of both Sm2Co17(R) and SmCo5(H) magnetic phases. Rutherford back scattering studies demonstrated that the surface-diffusion reactions between the Sm-Co layer and Si-surface not only accompanied by the quasi-layered growth of CoSi2-phase; but also led to the formation of SmCoSi2-phase. Cross-sectional transmission electron microscopy analysis revealed uneven boundary with deeply grown CoSi2-layer and Moiré fringes at limited regions of Co/Si interface. Magnetic measurements showed a square hysteresis loop with maximum values of coercivity (11.6 kOe) and remanence ratio (0.99) for the films grown at 500 °C. Magnetic force microscopy images depicted patch-like domains with increasing phase contrast against Td,Sm-Co. In addition, the changes that has occurred in the magnetization reversal processes accompanied by coercivity enhancement due to higher Td,Sm-Co is discussed in the context of domain morphology and first-order reversal curves.
Cite this Research Publication : Saravanan, P.; Boominathasellarajan, S.; Sobel, B.; Wacławek, S.; Vinod, V. T. P.; Talapatra, A.; Mohanty, J.; Černík, M. "Interfacial Layer Formation during High-Temperature Deposition of Sm-Co Magnetic Thin Films on Si (100) Substrates". Intermetallics 2019, 106, 36–47. https://doi.org/10.1016/j.intermet.2018.12.007.