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Investigation of β-Ga2O3- based HEMTs using 2D Simulations for Low Noise Amplification and RF Applications

Publication Type : Journal Article

Publisher : IOPScience

Source : Engineering Research Express 3

Url :

Campus : Amaravati

School : School of Engineering

Year : 2021

Abstract : Here we demonstrate a two-dimensional β-gallium oxide-based high electron mobility transistor (HEMT) comprising of a finite gap—access region gap $\left({{\boldsymbol{L}}}_{{\boldsymbol{ARG}}}\right)$ in Ohmic-contact access regions with record transconductance linearity. Apart from limiting two-dimensional electron gas (2-DEG) density ${{\boldsymbol{n}}}_{{\boldsymbol{s}}}$ dependency on gate voltage, higher saturation current is estimated for the proposed design. Since access regions length directly affects the Capacitance of the device and resultant switching applications. In this work, the effect of the gate-source and gate-drain length on device linearity is performed using Atlas-2D simulations. ${\boldsymbol{C}}-{\boldsymbol{V}}$ characteristics of the proposed device are explained based on the physical explanation and validated using appropriate models. The higher values of transconductance ${{\bf{g}}}_{{\boldsymbol{m}}}$ and current gain cut-off frequency ${{\boldsymbol{f}}}_{{\boldsymbol{T}}}$ on a large span of operating voltages ensure improved transistors' performance and are reported for the first time.

Cite this Research Publication : Singh, R., T. R. Lenka, D. K. Panda, and H. P. T. Nguyen. "Investigation of β-Ga2O3- based HEMTs using 2D Simulations for low noise amplification and RF applications." Engineering Research Express 3, no. 3 (2021): 035042. (ESCI, Scopus )

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