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Investigations on cobalt doped GaN for spintronic applications

Publication Type : Journal Article

Publisher : Journal of Crystal Growth

Source : Journal of Crystal Growth, Volume 318, Number 1, p.432-435 (2011)

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Keywords : A1. DFT, A1. Spintronic, A1. X-ray diffraction, B2. Dilute magnetic semiconductor, B2. Gallium nitride, B2. Magnetic moment

Campus : Coimbatore

School : School of Engineering

Department : Sciences

Year : 2011

Abstract : (Ga1−xCox)N was synthesized at 1223K using pure gallium and cobalt metal as precursors in a reactor specially designed for this purpose with ammonia as the nitrogen source. The structural confirmation of wurtzite phase of GaN is done using powder X-ray diffractometer. Photoluminescence shows red shift in band edge emission as the cobalt concentration increases from 1 to 5 atomic percentage together with nitrogen related vacancy emission at 3.24eV and cobalt related emission at 3.13eV. The magnetic properties were studied at 10K using superconducting quantum interface device (SQUID). The obtained maximum magnetic moments for 1%, 3% and 5% cobalt doped GaN are 1.63, 0.21 and 0.14μB, respectively. The decrease in magnetic moment with increase in dopant concentration may be due to the formation of secondary phases or cobalt cluster, which contributes to anti-ferromagnetism. From temperature dependent magnetization measurements it is observed that there is no drastic change in the magnetic moment upto room temperature for 1% cobalt doped GaN. Theoretical calculations based on the density functional theory within Tight Binding Linear Muffin-tin Orbital (TBLMTO) method has been carried out to study the magnetic properties of cobalt doped GaN. The obtained magnetic moment values per Co atom are 2.56μB for 1.56% and 2.77% and 1.50μB for 4.20%. This is found to be higher when compared with experimental values and this difference is explained based on structural defects and percentage of dopant used during synthesis. The half metallic behavior is observed for 1.56% and 2.77% Co dopants, but for higher percentage of dopant the system becomes metallic. Hence, it is concluded that only lower percentage of cobalt doped GaN is suitable for spintronic applications.

Cite this Research Publication : M. S. Basha, Dr. S. Ramasubramanian, Rajagopalan, M., Kumar, J., Kang, T. Won, N. Subramaniam, G., and Kwon, Y., “Investigations on cobalt doped GaN for spintronic applications”, Journal of Crystal Growth, vol. 318, pp. 432-435, 2011.

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