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Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

Publication Type : Journal Article

Source : International Journal of RF and Microwave Computer‐Aided Engineering

Url :

Campus : Amaravati

School : School of Engineering

Year : 2018

Abstract : This article presents an accurate and efficient extraction procedure for microwave frequency small-signal equivalent circuit parameters of AlInN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer-aided modeling approach. The S-, Y-, and Z- parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y- and Z- parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch-off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de-embedding the extrinsic parameters. S-parameter simulation of the developed small-signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small-signal parameters to minimize the error between developed SSEC model and device simulation based s-parameters. The microwave characteristics of optimized SSEC model is carried out (fT = 169 GHz and fmax = 182 GHz) and compared with experimental data available from literature to validate the model.

Cite this Research Publication : Amarnath, G., D. K. Panda, and T. R. Lenka. "Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT." International Journal of RF and Microwave Computer‐Aided Engineering 28.2 (2018): e21179. (SCI )

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