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Publication Type : Journal Article
Thematic Areas : Nanosciences and Molecular Medicine
Publisher : RSC Advances
Source : RSC Advances , Volume 7, Number 777, p.48853-48860 (2017)
Campus : Kochi
School : Center for Nanosciences
Center : Amrita Center for Nanosciences and Molecular Medicine Move, Nanosciences
Department : Nanosciences and Molecular Medicine, Nanosciences
Year : 2017
Abstract : A physical vapor deposition based molybdenum trioxide (MoO3) thin film is demonstrated as an efficient reverse-electron recombination barrier layer (RBL) at the fluorine doped tin oxide (FTO)/titanium dioxide (TiO2) interface in dye sensitized solar cells (DSSCs). Thin films of MoO3 show an average optical transmittance of ∼77% in a spectral range of 350–800 nm with bandgap value of ∼3.1 eV. For an optimum thickness of MoO3, deposited for 5 minutes, the resulting DSSCs showed 15% enhancement in efficiency (η) compared to the reference DSSC which did not use MoO3 RBL; this suggests that MoO3 is effectively suppressing interfacial recombination at the FTO/TiO2 interface. Further, increasing the thickness of MoO3 RBL at the FTO/TiO2 interface (20 minutes deposition) is observed to impede charge transport, as noticed with 55% reduction in η compared to the reference DSSC. Thin film MoO3 RBL with an optimum thickness value at the FTO/TiO2 interface efficiently blocks the leaky transport pathways in the mesoporous TiO2 nanoparticle layer and facilitates efficient charge transport as confirmed by electrochemical impedance spectroscopy.
Cite this Research Publication : A. Ashok, Vijayaraghavan, S. N., Shantikumar V Nair, and Dr. Mariyappan Shanmugam, “Molybdenum Trioxide Thin Film Recombination Barrier Layers for Dye Sensitized Solar Cells”, RSC Advances , vol. 7, pp. 48853-48860, 2017.