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P-Type ZnO materials: Theory, growth, properties and devices

Publication Type : Journal Article

Publisher : Progress in Materials Science

Source : Progress in Materials Science, Volume 58, Number 6, p.874-985 (2013)

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Keywords : Band gap engineering, Binding energy, Defects, Doping different elements, Electron mobility, Energy gap, Exciton-binding energy, Growth (materials), Growth techniques, High electron mobility, Hydrogen incorporation, Materials, Optoelectronic devices, Room temperature ferromagnetism, Self-compensation, Semiconductor doping, Semiconductor quantum wells, zinc, Zinc oxide

Campus : Amritapuri, Coimbatore

School : School of Arts and Sciences, School of Engineering

Department : Sciences

Year : 2013

Abstract : In the past 10 years, ZnO as a semiconductor has attracted considerable attention due to its unique properties, such as high electron mobility, wide and direct band gap and large exciton binding energy. ZnO has been considered a promising material for optoelectronic device applications, and the fabrications of high quality p-type ZnO and p-n junction are the key steps to realize these applications. However, the reliable p-type doping of the material remains a major challenge because of the self-compensation from native donor defects (VO and Zni) and/or hydrogen incorporation. Considerable efforts have been made to obtain p-type ZnO by doping different elements with various techniques. Remarkable progresses have been achieved, both theoretically and experimentally. In this paper, we discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively. We first discuss the native defects in ZnO. Among the native defects in ZnO, VZn and O i act as acceptors. We then present the theory of p-type doping in ZnO, and summarize the growth techniques for p-type ZnO and the properties of p-type ZnO materials. Theoretically, the principles of selection of p-type dopant, codoping method and XZn-2VZn acceptor model are introduced. Experimentally, besides the intrinsic p-type ZnO grown at O-rich ambient, p-type ZnO (MgZnO) materials have been prepared by various techniques using Group-I, IV and V elements. We pay a special attention to the band gap of p-type ZnO by band-gap engineering and room temperature ferromagnetism observed in p-type ZnO. Finally, we summarize the devices based on p-type ZnO materials. © 2013 Elsevier Ltd. All rights reserved.

Cite this Research Publication : J. Cab Fan, Dr. Sreekanth K. M., Xie, Zd, Chang, S. Le, and Rao, K. Va, “P-Type ZnO materials: Theory, Growth, Properties and Devices”, Progress in Materials Science, vol. 58, pp. 874-985, 2013.

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