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Piezoresistive MEMS pressure sensors using Si, Ge, and SiC diaphragms: A VLSI layout optimization

Publication Type : Conference Paper

Publisher : International Conference on Communication and Signal Processing, ICCSP 2014

Source : International Conference on Communication and Signal Processing, ICCSP 2014, Institute of Electrical and Electronics Engineers Inc., Melmaruvathur , p.597-601 (2014)

Url :

ISBN : 978-1-4799-3357-0

Keywords : Comsol multiphysics, Deflection (structures), Diaphragms, Different shapes, Geometry, Germanium, Insulator materials, Material change, Mechanical device, MEMS, MEMS pressure sensor, Piezoresistive properties, Piezoresistivity, pressure, Pressure sensors, Signal processing, Silicon carbide, Stresses

Campus : Amritapuri

School : School of Engineering

Center : Humanitarian Technology (HuT) Labs

Department : Electronics and Communication

Verified : Yes

Year : 2014

Abstract : The work presented in this paper relates to optimizing the VLSI layout geometry of a Piezoresistive MEMS Pressure Sensors. MEMS is the technology of miniaturizing mechanical devices with the aid of Electrical support. The study is conducted through the analysis of diaphragms made out of semiconductor and insulator materials. The Piezoresistive property of materials are used here where the resistivity of the material changes on application of pressure. The optimal diaphragm shape is decided by studying the deflection, stress, and output voltage. Three different shapes are considered for the studies, Circular, Square, and Rectangular. The stress, deflection, and output voltage are analyzed using COMSOL Multiphysics software and the observed results are included in the paper.

Cite this Research Publication : Rajesh Kannan Megalingam and Lal, L. S., “Piezoresistive MEMS Pressure Sensors using Si, Ge, and SiC Diaphragms: A VLSI Layout Optimization”, in International Conference on Communication and Signal Processing, ICCSP 2014, Melmaruvathur , 2014, pp. 597-601.

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