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Rectifying junction in a single ZnO vertical nanowire

Publication Type : Journal Article

Publisher : Applied Physics Letters

Source : Applied Physics Letters, Volume 89, Number 23 (2006)

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Campus : Coimbatore

School : Center for Industrial Research and Innovation

Center : Center for Industrial Research and Innovation (ACIRI)

Department : Nanosciences

Year : 2006

Abstract : The authors introduce dopants in vertically grown single crystalline ZnOnanowires in a controlled manner. A section of the nanowires is doped with aluminum as donor during crystal nucleation, resulting in n-n+n-n+ junction. Current-voltage characteristics of these single nanowire junctions via scanning tunneling microscopy and mercury-probe methods are asymmetric, displaying rectifying behavior. By inversing the junction during the growth or by introducing lithium as acceptor to form a n-pn-p junction, the directionality of current flow in the nanowires becomes reversed. The single nanowire diode junctions are very stable in ambient condition and hence open up a new dimension in nanoelectronics.

Cite this Research Publication : B. Pradhan, Sudip Kumar Batabyal, and Pal, A. J., “Rectifying junction in a single ZnO vertical nanowire”, Applied Physics Letters, vol. 89, 2006.

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