Publication Type : Journal Article
Publisher : IOP Conference Series: Materials Science and Engineering .
Source : IOP Conference Series: Materials Science and Engineering, Volume 149, Number 1, p.012183 (2016)
Url : http://stacks.iop.org/1757-899X/149/i=1/a=012183
Campus : Coimbatore
School : School of Engineering
Department : Electronics and Communication
Year : 2016
Abstract : A nearest neighbour tight binding approximation for analysing the I-V characteristics of ballistic CNTFETs is developed making use of the non-equilibrium green's function (NEGF) formalism. NEGF provides a matrix based computational since device description at the atomic level can be employed and multiple quantum phenomenon that are visible in real time can be effectively modelled. The proposed model involves zig-zag CNTs as the channel material with a 25nm channel length that uses a basis transformation to decouple the channel Hamiltonian. Temperature dependence on the output characteristics of CNTFETs with varying chirality is also studied. All simulations are carried out on MATLAB
Cite this Research Publication : S. Aravind, Shravan, S., Shrijan, S., R Sanjeev, V., and Dr. Bala Tripura Sundari B., “Simulation of Carbon Nanotube Field Effect Transistors using NEGF”, IOP Conference Series: Materials Science and Engineering, vol. 149, p. 012183, 2016.