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Sputtered silicon dioxide layers for MEMS applications

Publication Type : Conference Proceedings

Source : proc. IEEE conf. RAECE, pp. 222-227, 2016

Url :

Campus : Bengaluru

School : School of Engineering

Department : Electronics and Communication

Verified : No

Year : 2016

Abstract : In this work, silicon dioxide layers are deposited by RF sputtering technique at low temperatures for micro electro mechanical systems (MEMS) and CMOS applications. Due to incompatibility of thermally grown oxide in CMOS and MEMS applications, sputtered oxides shown good alternative method for oxide depositions. The sputtered layers shown similar characteristics as thermal oxides. FTIR, AFM and SEM analysis performed to characterize deposited thin films on silicon samples. Films with high density and good stoichiometry are observed. Cantilever structures are fabricated using bulk micromachining techniques.

Cite this Research Publication : Trishankar, Sandeep Singh Chauhan, and S. K. Manhas, “Sputtered silicon dioxide layers for MEMS applications,” in proc. IEEE conf. RAECE, pp. 222-227, 2016.

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