Course

Unit - 1

Review of Semiconductor basics – Extrinsic and intrinsic semiconductors – Density of states – Equilibrium Carrier concentrations – Drift velocity and mobility – Hall effect – Diffusion of Carriers – Built in fields – Excess Carriers – generation and recombination – continuity equation – time independent diffusion equations under low level injection – minority carrier diffusion – Haynes Shockley Experiment – Total current density

Unit - 2

Basic structure of PN junctions – Built-in-potential – Space Charge region – electric field across junction – qualitative description in forward and reverse bias – band diagram – minority carrier distribution across junction in forward and reverse bias – boundary conditions – derivation of ideal IV relation across PN junction – PN junction IV characteristics – junction capacitance – junction breakdown – Metal-Semiconductor Junctions – Basics of MOSFET – Ideal MOS Capacitor – band diagram of MOS.

Unit - 3

Basic structure of PN junctions – Built-in-potential – Space Charge region – electric field across junction – qualitative description in forward and reverse bias – band diagram – minority carrier distribution across junction in forward and reverse bias – boundary conditions – derivation of ideal IV relation across PN junction – PN junction IV characteristics – junction capacitance – junction breakdown – Metal-Semiconductor Junctions – Basics of MOSFET – Ideal MOS Capacitor – band diagram of MOS.

Text Books:

1. Ben G. Streetman and Sanjay Kumar Banerjee, “Solid State Electronic Devices”, Prentice Hall India, Sixth Edition, 2009.
2. Donald A. Neamen, “Semiconductor Physics and Devices: Basic Principles”, McGraw-Hill International, Third Edition, 2003.

References:

1. S. M. Sze and Kwok K. NG, “Physics of Semiconductor Devices”, John Wiley and Sons, Inc., Third Edition, 2007.
2. S. O. Kasap, “Principles of Electronic Materials and Devices”, Tata McGraw Hill, Third Edition, 2007