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Dr. Laxman Raju Thoutam

Assistant Professor, Amrita School for Nanosciences and Molecular Medicine, Kochi campus


Dr. Laxman Raju Thoutam is an Assistant Professor in nanoelectronics group at Amrita School for Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Kochi campus. Dr. Thoutam did his postdoctoral research on the synthesis and characterization of high-quality wide band-gap complex oxide thin films and heterostructures at University of Minnesota, USA. He received his Ph.D. in Nanoscience (2016) and Master of Science in Nanotechnology (2011) from Northern Illinois University, DeKalb, Illinois. USA. His Ph.D. dissertation work revealed intriguing three-dimensional electronic transport and temperature-dependent magnetoresistance anisotropy in a two-dimensional layered material WTe2, (the experimental findings were highlighted and as featured as a viewpoint article in physics(2015)).He has more than 11 years of cleanroom fab experience in design, development and testing of micro/nanoscale functional devices while working at Microelectronics Research and Development Laboratory (Northern Illinois University), Centre for Nanoscale Materials (Argonne National Laboratory) and Minnesota Nano Centre (University of Minnesota). He is interested to explore structure-property relationships in wide band-gap oxide semiconductors, two-dimensional materials, and perovskite-based material systems to design and develop functional device applications. He focuses primarily to investigate fundamental electronic properties of different material systems; and tailor new electronic properties into conventional materials using interface effect, proximity effect, and electrostatic field-effect approaches.Dr. Thoutam is currently focused on understanding and evaluating the doping efficiencies of ultra-wide bandgap semiconductor oxide materials to cater nanoscale optical and high-power device applications. He is also interested in the synthesis and characterization of tin-halide based perovskite systems; tune the interface band-alignment levels of the absorber/charge transport layers (by doping & material engineering) to decrease the interface defect densityto yield high solar-cell efficiencies.

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