Publication Type : Journal Article
Publisher : The Electrochemical Society
Source : ECS Transactions, The Electrochemical Society, Volume 3, Number 3, p.363–374 (2006)
Campus : Coimbatore
School : School of Engineering
Department : Chemical
Year : 2006
Abstract : We have investigated metal gate electrodes for use with high k HfSiOx gate dielectric films using AVD® and ALD technology. First, we report on the characterization of the AVD® and ALD deposition techniques where both HfO2 and SiO2 are combined for the formation of HfSiOx. Nitrogen is then incorporated using both in-situ and ex-situ methods to form HfSiON and the resulting film properties are compared. Using an AVD process a work-function of 4.7eV for Ru and RuO2 gate electrode metals in combination with HfSiOx was obtained. A TaN-based metal gate was also characterized to target a promising pMOS solution using different compositions. Together with its high flexibility and composition control, both ALD and AVD® can become key processes for advanced high-k dielectrics as well as compatible CMOS metal electrodes.
Cite this Research Publication : Z. Karim, Biossiere, O., Lohe, C., Zhang, Z., Park, W., Manke, C., Baumann, P. K., Dalton, J., Dr. Sasangan Ramanathan, Lindner, J., and , “Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-based Gate Dielectrics”, ECS Transactions, vol. 3, pp. 363–374, 2006.