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Effect of annealing rate on the crystallization process in Ge5Bi18Se77 films

Publication Type : Journal Article

Publisher : Thin Solid Films

Source : Thin Solid Films, Volume 353, Number 1–2, p.254 - 258 (1999)

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Keywords : Storngly oriented growth

Campus : Coimbatore

School : School of Engineering

Department : Electronics and Communication

Year : 1999

Abstract : Amorphous Ge5Bi18Se77 thin films deposited by thermal evaporation were crystallized by thermal annealing at their crystallization temperature (Tc). The composition, determined using EDAX, does not indicate any significant variation in both as-deposited films and films annealed with different annealing rates from that of bulk alloy. The effect of annealing rate on the nature and the degree of crystallization has been investigated by studying the structure using TEM/XRD and the surface morphology using SEM. It is found that the annealed films crystallized into a face centred cubic (FCC) phase with a lattice constant of 6.2084±0.0015 Å. Further, it is also seen that depending on the annealing rate, the as-deposited films crystallized into either single crystal films or polycrystalline films. A detailed analysis of the structural properties has been presented.

Cite this Research Publication : Dr. T. Rajagopalan and Reddy, G. B., “Effect of annealing rate on the crystallization process in Ge5Bi18Se77 films”, Thin Solid Films, vol. 353, pp. 254 - 258, 1999.

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