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Publication Type : Journal Article
Publisher : Materials Today: Proceedings
Source : Materials Today: Proceedings, Volume 33, p.1293-1297 (2020)
Keywords : dielectric constant, Dielectric relaxation, Nyquist plot, Raman modes, Tauc plot, Zr doped bismuth ferrite
Campus : Coimbatore
School : School of Engineering
Department : Sciences
Year : 2020
Abstract : The present work discusses the nature of electrical defects that influence the dielectric response of BiFe1-xZrxO3 nanostructures fabricated by hydrothermal method for x = 0.0, 0.005, 0.01, 0.015, 0.02 and 0.025. X-ray diffraction studies reveal that a higher concentration of Zr4+ ions can lead to the formation of an impure phase like Bi2Fe4O9 which increases the leakage current. Besides, the suppression of E-modes in a 1.5% doped sample confirms the structural distortion in FeO6 octahedra. A decrease in the optical band gap of Zr-doped samples indicates the presence of oxygen vacancies as donor levels within the forbidden gap. The dielectric constant of a 1.5% doped sample is quite higher than pure BiFeO3 sample at a frequency below 1 kHz. However, at higher frequency region (>1 kHz) the difference in dielectric constant between 1.5% Zr doped and a pure sample is quite less. Further, the broadened peak of M“(ω) of the doped sample indicates the non-Debye relaxation of charge carriers with different time constants.
Cite this Research Publication : R. Anjitha, Kathirvel, A., Dr. Umamaheswari A., and Sivakumar, M., “Influence of B-site doping on structural, optical and dielectric properties of bismuth ferrite”, Materials Today: Proceedings, vol. 33, pp. 1293-1297, 2020.