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Nanotube substituted source/drain regions for carbon nanotube transistors for vlsi circuits

Publication Type : Journal Article

Publisher : Journal of Nanoscience and Nanotechnology

Source : Journal of Nanoscience and Nanotechnology, Volume 11, Number 12, p.11015-11018 (2011)

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Keywords : Aggressive scaling, Carbon nanotube transistors, Carbon nanotubes, Chirality, CMOS, CMOS devices, CMOS integrated circuits, Electric properties, Fundamental limits, High-performance integrated circuits, Metal electrodes, Power efficient, Silicon Technologies, Source/drain regions, VLSI circuits

Campus : Amritapuri

School : School of Engineering

Department : Mechanical Engineering

Year : 2011

Abstract : Aggressive scaling of silicon technology over the years has pushed CMOS devices to their fundamental limits. Pioneering works on carbon nanotube during the last decade possessing exceptional electrical properties have provided an intriguing solution for high performance integrated circuits. So far, at best, carbon nanotubes have been considered only for the channel, with metal electrodes being used for source/drain. Here, alternative schemes of 'All-Nanotube' transistor are presented where even the transistor components are derived from carbon nanotubes which hold the promise for smaller, faster, denser and more power efficient electronics. Copyright © 2011 American Scientific Publishers All rights reserved.

Cite this Research Publication : Sa Dutta and Shankar, Bb, “Nanotube substituted source/drain regions for carbon nanotube transistors for vlsi circuits”, Journal of Nanoscience and Nanotechnology, vol. 11, pp. 11015-11018, 2011.

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