UNIT 1:Wave Diffraction and Reciprocal Lattice: Miller indices and its relationship with Inter planar spacing, Scattered Wave Amplitude – Fourier Analysis – Reciprocal Lattice Vectors – Diffraction Conditions – Laue Equations. Experimental methods Laue method Rotating crystal method Powder or Debye-Scherrer method. Brillouin Zones: Simple Cubic, FCC, and BCC lattices. Fourier Analysis of the Basis: Structure Factor of cubic and hexagonal lattices, Atomic Form Factor. UNIT 2:Energy Bands: Origin of Band gap – Nearly free electron model – Bloch Functions – Kronig-Penney model. Methods of Calculation of Energy bands: Reduced zone-periodic zone schemes. Tight Binding method (LCAO), Pseudopotential method.UNIT 3:Semiconductors: energy band structure, intrinsic and extrinsic semiconductors, Effective mass, carrier concentration, Hydrogenic model of impurity levels, law of mass action, Compensated doping, Degenerate Semiconductors, Fermi levels of intrinsic and extrinsic semiconductors, Temperature-dependent conductivity and mobility, Direct and indirect gap semiconductors, Hall effectUNIT 4:Semiconductor Devices: Built-in-potential – Space Charge region -electric field across junction, Forward and reverse bias – band diagram, minority carrier distribution across the junction in forward and reverse bias – boundary conditions – Basics of MOSFET Structure of MOSFET, Optoelectronic devices.UNIT 5:Optical properties of solids: Kramers-Kronig relations; Sum rules, Dielectric function for ionic lattice, Polaritons, Polarons, Dielectric function for free electron gas; loss spectroscopy. Optical properties of metals- Plasmons, skin effect, and anomalous skin effect. Free carrier absorption in semiconductor and Excitons: Interband transition – direct and indirect transition, Mott- Wannier excitons, Frenkel excitons, Luminescence.