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Self-aligned polysilicon polish

Publication Type : Other

Source : 2003

Url : http://www.google.com/patents/US6610577

Campus : Amritapuri

School : Centre for Cybersecurity Systems and Networks, School of Engineering

Center : TBI

Department : Chemical, cyber Security

Year : 2003

Abstract : A method for removing polysilicon from isolation regions on a substrate during semiconductor fabrication is disclosed. The method includes depositing a layer of polysilicon over the substrate, and depositing at least one dielectric layer over the polysilicon. The method further includes polishing the polysilicon from the isolation regions, wherein the dielectric layers act as a polishing stop, resulting in regions of polysilicon that are self-aligned to the trench isolation regions.

Cite this Research Publication : J. F. Thomas, Kim, U., and K. Achuthan, “Self-aligned polysilicon polish”. 2003.

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