Publication Type : Conference Paper
Publisher : IEEE
Source : 2020 IEEE Silicon Nanoelectronics Workshop (SNW)
Url : https://doi.org/10.1109/snw50361.2020.9131668
Campus : Haridwar
School : School of Computing
Year : 2020
Abstract : Performance of symmetric lateral doping-free bipolar junction transistor (BJT) on silicon on insulator (SOI) in universal gates and ring oscillator were investigated. Charge carriers in SOI at emitter and collector regions are induced with two unique approaches, i.e., the charge plasma (CP) and polarity control (PC). Four types of devices (CP-NPN, CP-PNP, PC-NPN, and PC-PNP) was used for bipolar CMOS type NAND and NOR gates. Excellent transient response with rise and fall time less than 5 ns and propagation delay less than 2.4 ns were obtained.
Cite this Research Publication : Abhishek Sahu, Abhishek Kumar, Shree Prakash Tiwari, Performance Investigation of Universal Gates and Ring Oscillator using Doping-free Bipolar Junction Transistor, 2020 IEEE Silicon Nanoelectronics Workshop (SNW), IEEE, 2020, https://doi.org/10.1109/snw50361.2020.9131668