Course

Unit 1:

Passive RLC Networks: Parallel – Series – Impedance Transformers – L-Pi-T-Type – Higher Order Matching. Circuit Models: Lumped and Distributed Elements – Transmission Lines – Driving Point Impedance – Artificial Lines – Microstrip -CPW. Small Signal RF CMOS Model: Noise Sources – Distributed Gate Effects – Multi-Fingered Gate – Maximum Available Power Gain – Unity Power Gain Frequency.

Unit 2:

Two Port Network: S-Parameters – Maximum Stable Gain – Reflection Coefficients – Stability – Non-Linearity – 1-dB Gain Compression Point – IIP3/OIP3 – Dynamic Range. RF Transmitter: Bit Error Rate – Signal to Noise Ratio – Sensitivity – Receiver Architecture – Direct Conversion – Super Heterodyne – Hartley Architecture. CMOS-based sub-blocks: Low Noise Amplifier – Input Impedance Matching – Topology Classification – Active loads – Inductive Source Degeneration – Cascode and Differential Configurations – Inductive Peaking – Current Reuse.

Unit 3:

High Frequency Amplifier Design: Bandwidth Enhancement – Tuned Amplifiers – Broadband Monolithic Distributed Amplifier. Mixer Fundamentals: Nonlinear Systems as Linear Mixers – CMOS-Based Down-Conversion Mixers – Single-Balanced – Double Balanced Gilbert Cell Mixer. CMOS-Based Power Amplifiers: Classification – Doherty Power Amplifiers. Case Study of ADAR2004: 10 GHz to 40 GHz, 4-Channel Rx Mixer with 4× LO Multiplier/Filter.

Course Objectives

• To provide an overview of RF CMOS device characterization
• To enhance design skills by using two-port network parameters such as MAG/MSG, noise figure, stability, linearity and reflection coefficients in RF ICs
• To gain computation skills and to become an expert in designing RF amplifiers in nanometer CMOS technology using modern engineering tools

Course Outcomes: At the end of the course, the student should be able to

• CO1: Ability to understand RF CMOS device characteristics and its importance in RF ICs
• CO2: Ability to apply RF computational techniques to design actively loaded RF amplifiers
• CO3: Ability to analyze two port network parameters like Forward Gain, Noise Figure, Stability, Linearity, Mismatches and Reflection Coefficients in CMOS-based RF sub-blocks
• CO4: Ability to analyze the characteristics of CMOS-based RF sub-blocks from top-level specifications and to model circuits using circuit simulators

Skills Acquired: Provides a platform to design and analyze RF CMOS amplifiers and to verify with the help of industry standard tools

CO-PO Mapping:

1. Thomas Lee, The Design of CMOS Radio Frequency Integrated Circuits, Second Edition, Cambridge University Press, 2004, Indian Reprint of 2009.
2. SorinVoinigescu, High-Frequency Integrated Circuits, Cambridge University Press, 2013, South Asian Paperback edition of 2018.
3. Razavi, RF Microelectronics, Second Edition, Pearson, 2012 (Indian Edition 2013 by Dorling Kindersley).
4. Michael Steer, Microwave and RF Design – A Systems Approach, SciTech Publishing, 2010, Indian Reprint by Yesdee Publishing, 2012.
5. Mike Golio, ed. RF and microwave semiconductor device handbook. CRC press, 2017.