Course

Unit 1:

Static Random-Access Memories (SRAMs): SRAM cell structure, MOS SRAM architectures, MOS RAM Cell and Peripheral circuit operation, Bipolar SRAM technologies, Silicon on Insulator (SOI) Technology, Advanced SRAM architectures, Application-specific SRAMs.
Dynamic Random-Access Memories (DRAMs): DRAM technology development, CMOS DRAMs, DRAM Cell Theory and Advanced cell structures, BiCMOS DRAMs, Soft-Error failures in DRAMs, Advanced DRAM Designs and Architectures, Application-Specific DRAMs.

Unit 2:

Read-Only Memories (ROMs): Masked ROMs, Technology development and Cell programming, High-Density (Multimegabit) ROMs. Programmable Read-Only Memories (PROMs): Bipolar PROMs, CMOS PROMs. Erasable (UV) Programmable Read-Only Memories (EPROMs): Floating-gate EPROM cells, EPROM Technology Developments, Advanced EPROM Architectures, One-Time Programmable (OTP) EPROMs.

Electrically Erasable PROMs (EEPROMs): EEPROM technologies – MNOS, SONOS, FLOTOX, Textured-Polysilicon Technology; EEPROM architectures, nonvolatile SRAM (Shadow RAM). Flash Memories: Flash memory cells and Technology Developments, Advanced Flash Memory Architectures

Unit 3

Ferroelectric Random-Access Memories (FRAMs): Basic theory, FRAM Cell and Memory Operation, FRAM Technology Developments, comparison of FRAMs with EEPROMs.Gallium Arsenide (GaAs) FRAMs: GaAs-based FRAM technologies and applications. Analog Memories: Concepts and applications of analog memory technologies. Magnetoresistive Random Access Memories (MRAMs): MRAM technology and advancements.

Experimental Memory Devices: Quantum-Mechanical Switch Memories, GaAs n-p-n-p Thyristor/JFET Memory cell, Single-Electron Memory, Neuron-MOS Multiple-Valued (MV) Memory Technology.

Course Objectives

• To understand the architecture, operation, and applications of various semiconductor memory technologies, including SRAM, DRAM, ROM, PROM, EPROM, EEPROM, and Flash memory.
• To explore advanced memory technologies such as FRAM, MRAM, and GaAs- based memories, along with their advantages and applications.
• To study emerging memory technologies, including experimental memory devices, and their potential impact on future semiconductor memory design.
• To analyze and compare different memory architectures to optimize performance and power consumption for specific applications.

Course Outcomes
At the end of the course, the student should be able to

• CO1: understand the fundamental principles and working mechanisms of various memory technologies, including SRAM, DRAM, and nonvolatile memories.
• CO2: compare advanced memory technologies such as FRAM, MRAM, and experimental memory devices for their advantages and limitations.
• CO3: analyze different memory architectures and their applications in modern computing systems.
• CO4: apply knowledge of memory technologies to design and optimize memory systems for specific applications.

Skills Acquired: The student will acquire the ability to understand and differentiate various memory technologies, analyze memory architectures and their impact on system performance, evaluate emerging memory technologies for advanced applications, and apply memory design concepts for optimization in real-world scenarios.

CO-PO Mapping:

1. Ashok Sharma, Semiconductor Memories Technology, testing and reliability, Prentice hall of India Private Limited, New Delhi 1997.
2. Ashok K Sharma, Advanced Semiconductor Memories – Architecture, Design and Applications, Wiley 2002.
3. Shimeng Yu, Semiconductor Memory Devices and Circuits, CRC Press, 2013.