Course

Unit I

Introduction to MOSFET – Output and Transfer Characteristics – MOS Capacitor ––Long, short channel MOSFETS – Non-Ideal Effects – MOSFET Scaling – Threshold voltage– Small signal model – Large Signal model – MOSFET parasitic capacitances.

Unit II

SPICE Models for semiconductor Devices –MOSFET Level1, Level2 and level 3 models –BSIM model– Model parameters– Models for semiconductor contacts and hetero junctions – Charge control models –Second order effects –Velocity Saturation and universal models– FINFETs –SOI MOSFETS: single gate to multi gate -Multigate MOSFET Technology –Physics of multigate MOS– Mobility in multigate MOSFET

Unit III

Radiation Effects in Single gate and Multi gate FETs – Single event effects – Multigate MOSFET Circuit Design – Digital, Analog circuit design – Double gate MOSFET- Drain current model – Scale length – Fabrication Requirements – Challenges – SoC Design- Technology Aspects

Learning Objectives

LO1 To review the basic MOSFET structures and characteristics.

LO2 To impart knowledge on MOS models in simulation.

LO3 To introduce FINFETs and other multi-gate transistors.

LO4 To provide practical knowledge on design tools for device modelling.

Course Outcomes

CO1 Ability to understand the MOSFET structure evolution, types and working principle and
multi gate transistors.
CO2 Ability to apply the knowledge to model devices using simulation.

CO3 Ability to analyse the device behaviour and characteristics of MOS using simulation.

CO-PO Mapping

References

1. G Streetman and S.K Banerjee, Solid State Electronic Devices, Seventh Edition, PrenticeHall India,2010
2. A.Neamen, Semiconductor Physics and Devices: Basic Principle, Third Edition, McGraw –Hill International,2003.

3. P. Collinge, FinFETs and Other Multi-Gate Transistors, Springer, 2008
4. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, Second Edition, Cambridge University Press,2009.