Publication

Abstract : The escalating trend of chip integration and miniaturization has dared the designers to seek to a nascent phenomenon to save the Moore’s law. Due to continuous reduction in device size, the so-far-unseen quantum effects have dominated the device physics. The solution to this crisis is nanoelectronics. Nano structures are used to develop new devices by utilizing the quantum effects. III group compounds have been known for their special properties as semiconductors in electronics. By including nanoscale nature with III group compounds, greater advantages can be obtained. III group nitride nanotubes have been investigated in many works. The nanotubes under discussion are boron nitride nanotubes and gallium nitride nanotubes. The phenomenon used for analysis in this work is Density Functional Theory (DFT). The characteristics of a device can be deduced from the electronic cloud structure around the device through density functional theory. In this work, III group nitride nanotubes are employed as transistor channels and their characteristics are scrutinized through simulation studies