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Publication Type : Journal Article
Publisher : Springer
Source : Information Technology and Mobile Communication in the series Communications in Computer and Information Science, Springer, Volume 147 CCIS, Nagpur, Maharashtra, p.297-300 (2011)
ISBN : 9783642205729
Keywords : Bsim3v3, Circuit simulation, CMOS integrated circuits, CMOS millimeter-wave integrated circuits, Composite models, high frequency (HF) behaviour, Information technology, Integrated circuits, integration, Low noise, Low noise amplifiers, Millimeter wave devices, Millimeter waves, Mobile telecommunication systems, Monolithic microwave integrated circuits, MOSFET devices
Campus : Coimbatore
School : School of Engineering
Center : Electronics Communication and Instrumentation Forum (ECIF)
Department : Electronics and Communication
Year : 2011
Abstract : In this paper, MOSFET modeling for millimeter wave integrated circuits is discussed. High frequency MOSFET is built using BSIM3v3 as intrinsic core and the parasitics due to HF are designed as extrinsic subcircuit. The proposed methodology is then used in designing a low power, mm-wave CMOS low noise amplifier. The operation of the circuit is simulated using a circuit simulator. The wideband characteristics are verified by implementing the LNA circuit with and without composite model. © 2011 Springer-Verlag
Cite this Research Publication : Aa Raj, Karthigha, Bb, and Dr. Jayakumar M., “Designing and modeling of CMOS low noise amplifier using a composite MOSFET model working at millimeter-wave band”, Information Technology and Mobile Communication in the series Communications in Computer and Information Science, vol. 147 CCIS, pp. 297-300, 2011.