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Digital Simulation of ZnON-TFT

Publication Type : Conference Paper

Publisher : IEEE

Source : 2024 9th International Conference on Communication and Electronics Systems (ICCES)

Url : https://doi.org/10.1109/icces63552.2024.10859692

Campus : Amritapuri

School : School of Engineering

Year : 2024

Abstract : Modern screens largely employ the services of Thin Film Transistor (TFT) technology for improving image quality as well as making a lot of applications possible. In this work, we used Cadence Virtuoso and Verilog-A modeling to simulate and evaluate the performance of ZnON TFTs, i.e., Zinc Oxy Nitride Thin Film Transistors in a variety of circuit designs. A ZnON TFT model was designed based on the drain-to-source current equation, and its functionalities was verified in circuits like oscillator, inverters, and NAND gates were checked and compared with the experimental results to be verified. The outcome shows the correctness of the model and demonstrates how it can be applied to drive circuits and complex display technology, thereby highlighting the importance of simulation in design optimization and cost-effective development..

Cite this Research Publication : Anjana J. G., Malavika M. U., Digital Simulation of ZnON-TFT, 2024 9th International Conference on Communication and Electronics Systems (ICCES), IEEE, 2024, https://doi.org/10.1109/icces63552.2024.10859692

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