Has received Industry funded project of ₹8 lakhs for a duration July 2025 – February 2026
Project Members
Objective:
The primary objective of this project is to comprehensively characterize the static and dynamic performance of Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs). Unlike traditional Silicon-based devices, GaN offers superior switching speeds and breakdown voltages. This research aims to validate these parameters under real-world operating conditions, focusing on switching loss analysis, gate-drive optimization, and thermal stability to enable the design of ultra-high-density power converters.
Origin of Proposal Idea:
As the power electronics industry transitions from Silicon (Si) to Wide Bandgap (WBG) materials, there is a critical need to understand the practical implementation challenges of GaN devices. While theoretical datasheets promise high efficiency, practical issues such as electromagnetic interference (EMI), gate ringing, and thermal management at high frequencies remain “open research problems.” This proposal originates from the industry’s requirement to validate GaN devices in hard-switching topologies to replace bulky silicon IGBTs/MOSFETs in next-generation chargers and inverters.
Deliverables / Approach:
The project focuses on building a dedicated characterization test-bed. Key deliverables include:
Amount: ₹8 Lakhs
Duration: July 2025 – February 2026
SDGs
