Publication

Abstract : Design conversion between different technology nodes, such as from GPDK 180nm to GPDK 45nm, offers nu-merous issues due to differences in device properties, layout and schematic compatibility, operating voltages, and process-specific intellectual property (IP) constraints. Despite the advancement of predictive technology models (PTMs) and the use of advanced synthesis tools and process design kits (PDKs), establishing consistent performance and preserving design integrity across nodes remains difficult. Key problems include ensuring that device characteristics and layout properties are compatible across nodes. Recent approaches, like the ASAP7 for FinFET standard cells, provide advancements; however, there are still constraints in inter-node compatibility and dependability when scaling. This work provides a systematic design conversion approach that addresses these problems through detailed characterization investigations, parameter mapping, and device translation, with a focus on assuring a smooth transition and functionality retention. This technique seeks to improve cross-node design compatibility and broaden the usability of semiconductor designs to consumer electronics and industrial applications.