ProgramsView all programs
From the news
- Chancellor Amma Addresses the Parliament of World’s Religions
- Amrita Students Qualify for the European Mars Rover Challenge
Publication Type : Conference Paper
Publisher : MRS Proceedings, Cambridge University Press (1999)
Source : MRS Proceedings, Cambridge University Press (1999)
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 1999
Abstract : HfO2 is the one of the potential high-k dielectrics for replacing SiO2 as a gate dielectric. HfO2 is thermodynamically stable when in direct contact with Si and has a reasonable band gap (∼5.65eV). In this study, MOS capacitors (Pt/HfO2/Si) were fabricated by depositing HfO2 using reactive DC magnetron sputtering in the range of 33∼135Å followed by Pt deposition. During the HfO2 deposition, O2 flow was modulated to control interface quality and to suppress interfacial layer growing. By optimizing the HfO2 deposition process, equivalent oxide thickness (EOT) can be reduced down to ∼11.2 Å with the leakage current as low as 1X10−2 A/cm2 at +1.0V and negligible frequency dispersion. HfO2 films also show excellent breakdown characteristics and negligible hysteresis after high temperature annealing. From the high resolution TEM, there is a thin interfacial layer after annealing, suggesting a composite of Si-Hf-O with a dielectric constant of ≈ 2 X K SiO2.
Cite this Research Publication : L. Kang, Lee, B. - H., Qi, W. - J., Jeon, Y. - J., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., “Highly reliable thin hafnium oxide gate dielectric”, in MRS Proceedings, 1999.