Lateral I - Mos (Impact – Ionization) Transistor

Publication Type:

Journal Article

Authors:

Sudha Yadav; Dr. PukhrajVaya

Source:

IOSR Journal of Electronics and Communication Engineering (IOSRJECE), Volume 1, Issue 6, p.46 to 48 (2012)

Cite this Research Publication

S. Yadav and PukhrajVaya, D., “Lateral I - Mos (Impact – Ionization) Transistor”, IOSR Journal of Electronics and Communication Engineering (IOSRJECE), vol. 1, no. 6, p. 46 to 48, 2012.

 
          
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