Publication Type : Conference Paper
Publisher : International Electron Devices Meeting. Technical Digest
Source : International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
Keywords : Annealing, Boron, boron penetration suppression, Dielectric devices, Dielectric substrates, Dielectric thin films, gate dielectrics, Hafnium compounds, Hafnium oxide, HfO/sub 2/ gate dielectric, HfO/sub 2/:N, Hysteresis, Interface states, low interfacial trap density, MOS capacitors, MOSFET, MOSFET characteristics, MOSFET circuits, N profile engineering, nitrogen, oxidation, rapid thermal annealing, reactive sputtering method, reoxidation anneal, Silicon, sputter deposition, Sputtering, TaN-HfO/sub 2/-Si, TaN/HfO/sub 2//Si MOSFET performance, tantalum compounds, temperature, Thermal engineering, Thermal stability
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2001
Abstract : A novel technique to tailor the nitrogen profile in HfO/sub 2/ gate dielectric has been developed. Nitrogen was incorporated in the upper layer of HfO/sub 2/ using a reactive sputtering method, followed by a reoxidation anneal. The resulting dielectrics showed good thermal stability, boron penetration suppression, low interfacial trap density, plus lower hysteresis and improved MOSFET characteristics, in comparison to both non-nitrided and bottom nitrided (via Si-surface nitridation with NH/sub 3/) devices.
Cite this Research Publication : H. J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance”, in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.