Publication Type : Conference Proceedings
Publisher : IEEE
Source : 2021 IEEE 2nd International Conference on Smart Technologies for Power, Energy and Control (STPEC)
Url : https://doi.org/10.1109/stpec52385.2021.9718720
Campus : Coimbatore
School : School of Engineering
Year : 2021
Abstract : In this article, dynamic switching behavior of Si-IGBT and SiC-MOSFET was compared with double pulse test (DPT) method in LTspice simulation software. The devices were selected to have similar maximum ratings, thermal impedances, maximum power dissipation and package type. Simulation model of the discrete semiconductor devices were obtained from their respective manufacturers to perform a close to real simulation analysis. With the obtained results from DPT and the static parameter available in the datasheet, the devices were compared in an inverter application. Efficiency of inverter and euro-efficiency are evaluated for various switching frequencies. The devices were also tested for their maximum current handling capability for a range of switching frequency till their maximum power dissipation limit.
Cite this Research Publication : J. Srijeeth, S.R. Mohanrajan, A. Vijayakumari, Performance comparison of Si-IGBT and SiC-MOSFET in an inverter application using DPT, 2021 IEEE 2nd International Conference on Smart Technologies for Power, Energy and Control (STPEC), IEEE, 2021, https://doi.org/10.1109/stpec52385.2021.9718720