Publication

Abstract : Memristor which acts as an artificial synapse is truly inspired by biological neurons. This device does emulate various synaptic behavior as the brain of a human. In this work, Aluminum-Zinc Oxide (AZO)-based transparent flexible memristor is fabricated on a flexible Polyethylene Naphthalate (PEN) substrate. The composition of the device for the optimized flow rate of Ar:O2::2:1 is analyzed using X-ray photoelectron spectroscopy (XPS). A bipolar resistive switching behavior of AZO/ZnO/ITO exhibits in the device. It shows good endurance of more than 500 cycles and has a long retention up to 104 s. The improvement of non-linearity (potentiation 2.31 and depression 3.05) is obtained for the optimized device, having stable 25 cycles epochs. About 90% transparency in the visible region makes the device suitable for invisible electronics. These results show that the device can be used as a transparent electrode in neuromorphic applications.