Publication Type : Journal Article
Publisher : Journal of Semiconductor Devices and Circuits ISSN: 2455-3379, STM Journals
Source : Journal of Semiconductor Devices and Circuits ISSN: 2455-3379, STM Journals, Volume 3, Issue 1, p.42-57 (2016)
Url : https://www.researchgate.net/profile/Pritam_Bhattacharjee4/publication/306392433_SPICE_Modeling_of_LDMOSFET_Transistor/links/5bdb9375a6fdcc3a8db77f6d/SPICE-Modeling-of-LDMOSFET-Transistor.pdf
Keywords : High Voltage Integrated Circuits, LDD, LDMOS, RESURF Technology
Campus : Amritapuri
School : Department of Computer Science and Engineering, School of Engineering
Department : Computer Science
Year : 2016
Abstract : High voltage integrated circuits, these days are the most viable alternatives to discrete circuits
for various applications. The popular amongst them is the lateral double diffused MOS
transistor (LDMOS). It is based on the lightly doped drain (LDD) concept. The constraint that
occurred in modeling LDMOS is to minimize the on-resistance along with maintaining a high
breakdown voltage. To achieve the objective, the help of RESURF (Reduced Surface Field)
concept has been taken. In this thesis, a LDMOS based on LDD and RESURF technology has
been designed considering some of the key specific parameters related to LDMOS devices. A
structural, small-signal and electrical model of the device has been stated with Y-parametric
extraction of few device capacitances and the transconductance. With the help of MOS Model
20 (MM20) and TCAD, the current characterization of the device is plotted in the paper.
Cite this Research Publication : Dr. Pritam Bhattacharjee, “SPICE Modeling of LDMOSFET Transistor”, Journal of Semiconductor Devices and Circuits ISSN: 2455-3379, vol. 3, no. 1, pp. 42-57, 2016.
