Publication

Abstract : High voltage integrated circuits, these days are the most viable alternatives to discrete circuits for various applications. The popular amongst them is the lateral double diffused MOS transistor (LDMOS). It is based on the lightly doped drain (LDD) concept. The constraint that occurred in modeling LDMOS is to minimize the on-resistance along with maintaining a high breakdown voltage. To achieve the objective, the help of RESURF (Reduced Surface Field) concept has been taken. In this thesis, a LDMOS based on LDD and RESURF technology has been designed considering some of the key specific parameters related to LDMOS devices. A structural, small-signal and electrical model of the device has been stated with Y-parametric extraction of few device capacitances and the transconductance. With the help of MOS Model 20 (MM20) and TCAD, the current characterization of the device is plotted in the paper.