Publication Type : Conference Paper
Publisher : IEEE
Source : 2021 IEEE 2nd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC)
Url : https://doi.org/10.1109/aespc52704.2021.9708499
Campus : Amritapuri
School : School of Computing
Department : Computer Science and Engineering
Year : 2021
Abstract :
Temperature dependent study on the linearity and harmonic distortion performances of FinFET are being compared with gate all around Nanowire FET (GAA NW-FET). Short channel effects (SCEs) parameters such as threshold voltage (Vth), sub-threshold swing (SS), drain induced barrier lowering (DIBL) and switching ratio with temperature are studied. Results show that FinFET device exhibits 21.96% enlargement in ION at 300K as compared to GAA NW-FET device. It is observed that GAA NW-FET device is more preferable on SCE performance and shows an improvement of SS, and DIBL with temperature variation. It is observed that FinFET and GAA NW-FET both device delivers a significant improvement of higher-order current intercept points IIP3, and 1dB compression point with lesser harmonic distortion such as HD2, HD3 at elevated temperature. However, FinFET device has shown an improvement of higher-order of transconductance (Gm) such as Gm2, Gm3 and higher order of voltage intercept point such as VIP2, VIP3 with low temperature.
Cite this Research Publication : Rinku Rani Das, Atanu Chowdhury, Apurba Chakraborty, Temperature Dependent Linearity/Harmonic Analysis for FinFET and Gate All Around (GAA) Nanowire FET, 2021 IEEE 2nd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC), IEEE, 2021, https://doi.org/10.1109/aespc52704.2021.9708499