Publication Type : Journal Article
Publisher : International Journal of Applied Engineering Research
Source : International Journal of Applied Engineering Research , Volume 10, Issue 12, p.32363-32369 (2015)
Url : https://www.researchgate.net/publication/282960266_A_289ppmC_current_reference_generation_with_temperature_compensation_using_90-nm_CMOS_circuit
Campus : Coimbatore
School : School of Engineering
Department : Electronics and Communication
Year : 2015
Abstract : This paper presents a low-power and low-voltage CMOS based reference current system, stable against temperature variation using 90 nm CMOS technology. Comparatively less power consumption of 2.02 μW is achieved by the circuit. The circuit is intended to compensate the variation in threshold voltage and mobility of MOSFETs with temperature. MOSFETs in this circuit are biased at their ZTC point to achieve temperature compensation and the circuit generates a reference current that is compensated against temperature variation. It attains a temperature coefficient of 2.89 ppm/°C for a drift of 20°C to 160°C.
Cite this Research Publication : N. M. N. Kayalvizhi and Mathew, N., “A 2.89ppm/°C Current Reference Generation with Temperature Compensation using 90-nm CMOS Circuit”, International Journal of Applied Engineering Research , vol. 10, no. 12, pp. 32363-32369, 2015.