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Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET’s

Publication Type : Conference Paper

Publisher : Symposium on VLSI Technology

Source : Symposium on VLSI Technology (2001)

Url :

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2001

Abstract : Effect of dopant penetration on electrical characteristics of polysilicon gate HfOz gate dielectric MOSFET’s has been studied quantitatively, for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V,) but channel carrier mobility. Surface nitridation prior to Hf02 deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.

Cite this Research Publication : K. Onishi, Kang, L., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Jeon, Y., Kang, C. Seok, Lee, B. Hun, Nieh, R., and Lee, J. C., “Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET's”, in Symposium on VLSI Technology, 2001.

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