Publication Type : Conference Paper
Publisher : Symposium on VLSI Technology
Source : Symposium on VLSI Technology (2001)
Url : http://gistexel.com/wp-content/uploads/2014/09/2001_Proc.VLSI_.Sym_K.Onishi.pdf
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2001
Abstract : Effect of dopant penetration on electrical characteristics of polysilicon gate HfOz gate dielectric MOSFET’s has been studied quantitatively, for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V,) but channel carrier mobility. Surface nitridation prior to Hf02 deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.
Cite this Research Publication : K. Onishi, Kang, L., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Jeon, Y., Kang, C. Seok, Lee, B. Hun, Nieh, R., and Lee, J. C., “Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET's”, in Symposium on VLSI Technology, 2001.