Publication Type : Journal Article
Publisher : Materials Letters
Source : Materials Letters Volume 220 Pages 285-288, 2018
Url : https://www.sciencedirect.com/science/article/abs/pii/S0167577X18303975
Campus : Coimbatore
School : School of Physical Sciences
Center : Center for Industrial Research and Innovation (ACIRI)
Department : Physics
Verified : No
Year : 2018
Abstract : Kesterite type CZTS (Cu2ZnSnS4) thin films were deposited on Indium Tin Oxide (ITO) coated glass substrates by simple sol-gel method. X-ray diffraction (XRD) pattern showed the presence of crystalline kesterite phase, whereas the electron microscopic (FESEM) analysis established the 1D morphology of the CZTS films. Electrical studies revealed the interesting bistability phenomena of CZTS films. The current-voltage (I-V) characteristics showed two distinct paths for forward and reverse sweep directions. Conducting AFM (C-AFM) studies also supported the bistability phenomena of the CZTS films. Present study on electrical bi-stability of the CZTS thin films will help to understand the defects in the absorber materials and the photovoltaic performance of the CZTS device. © 2018 Elsevier B.V.
Cite this Research Publication : G Rajesh, N Muthukumarasamy, S Agilan, Dhayalan Velauthapillai, Kallol Mohanta, Sudip K Batabyal, "Electrical bistability of sol-gel derived Cu2ZnSnS4 thin films", Materials Letters Volume 220 Pages 285-288, 2018