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Publication Type : Conference Paper
Publisher : 60th DRC. Conference Digest Device Research Conference, IEEE
Source : 60th DRC. Conference Digest Device Research Conference, IEEE (2002)
Keywords : Annealing, Dielectrics, Electrodes, Fabrication, Hafnium oxide, Hydrogen, Interface states, MOSFETs, Scattering, temperature
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2002
Abstract : MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability.
Cite this Research Publication :
R. Choi, Onishi, K., Kang, C. Scok, Nieh, R., Dr. Sundararaman Gopalan, Cho, H. - J., Krishnan, S., and Lee, J. C., “High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode”, in 60th DRC. Conference Digest Device Research Conference, 2002.