Publication Type : Patents
Publisher : Number 9159608
Source : Number 9159608, US 14/391,294 (2015)
Url : https://www.google.com/patents/US9159608
Campus : Coimbatore
School : School of Engineering
Department : Chemical
Year : 2015
Abstract : There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9×10−3 Torr or less, Si containing gas: 1×10−3˜3×10−1 Torr and N containing gas: 7×10−3˜6×10−1 Torr, and a pressure range of the gas is 500 mTorr˜5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.
Cite this Research Publication : W. PARK, Jang, Y. J., Kim, G. Y., Lu, B., Siu, G., Silva, H., and Dr. Sasangan Ramanathan, “Method for Forming TiSiN Thin Film Layer by using Atomic Layer Deposition (Granted)”, U.S. Patent 9159608, US 14/391,2942015.