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Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction

Publication Type : Journal Article

Publisher : Springer

Source : Silicon (2020)

Url : https://link.springer.com/article/10.1007/s12633-020-00784-9

Campus : Amaravati

School : School of Engineering

Year : 2020

Abstract : In this paper, a dielectric modulated dual material gate TFET (DM-DMG_TFET)based biosensor is proposed. In order to detect various biomolecules, a nanogap cavity is formed by the overlapping the gate on the drain side. The change in ambipolar current is considered as the sensing parameter by changing the dielectric constants of various immobilized biomolecule inside the nano cavity. A complete investigation on the performance of the biosensor is also done by considering different positions and filling factor of the biomolecules inside the nano cavity region. The dual-material gate structure is considered with dissimilar work functions (фM1 < фM2), which can effectively reduce the ambipolar current by enhancing the barrier width at channel-Drain junction. The proposed structure deliberately reduces ambipolar current and increases the sensitivity as compared to the single material gate structure. In this work we report a drift in the sensitivity from 104 to 106 for low dielectric constant biomolecules.

Cite this Research Publication : Reddy, N. Nagendra, and Deepak Kumar Panda. "Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction." Silicon (2020): 1-7. (SCI )

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