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Publication Type : Patents
Source : Number 6015759, USA (2000)
Campus : Coimbatore
School : School of Engineering
Department : Chemical
Verified : Yes
Year : 2000
Abstract : Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer With electromagnetic radiation in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) Wavelengths. The surface smoothness of the resulting ?lms are also increased by pre-treating ?lms With UV and/or VUV radiation. Furthermore, the gap ?lling abilities of the undoped silicate glass ?lms are increased by pre-treating the thermal oxide With UV and/or VUV radiation. NeW equipment and meth ods are presented for exposing semiconductor devices to UV and/or VUV radiation, and for enhancing the deposition rates and ?lm quality for semiconductor manufacture. Semi conductor devices incorporating the neW methods are also described.
Cite this Research Publication : Dr. Sasangan Ramanathan, Khan A., and Foggiato G. A., “Surface Modification of Semiconductors using Electromagnetic Radiation (Granted)”, U.S. Patent 60157592000.