Back close

Surface potential based modeling of zinc oxynitride thin film transistors

Publication Type : Journal Article

Publisher : Flexible and Printed Electronics

Source : Flexible and Printed Electronics, 7(3), p.035004, 2022

Url : https://iopscience.iop.org/article/10.1088/2058-8585/ac792a/meta

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2022

Abstract : In this work we present analytical models for the drain current and threshold voltage of zinc oxynitride thin film transistors. A surface potential based modeling approach has been adopted and the exact closed form solutions for the potential profile, drain current and threshold voltage have been obtained. In order to account for the effects of both free and localized charges in the semiconductor, an effective charge density method has been used. The models were validated against experimental data from literature. The models show good agreement with the data.

Cite this Research Publication : Anjana, J.G., Anand, V. and Nair, A.R., 2022. Surface potential based modeling of zinc oxynitride thin film transistors. Flexible and Printed Electronics, 7(3), p.035004

Admissions Apply Now