Publication

Publication Type : Conference Paper

Publisher : IEEE

Source : 2022 IEEE 19th India Council International Conference (INDICON)

Url : https://doi.org/10.1109/indicon56171.2022.10039949

Campus : Amritapuri

School : School of Computing

Department : Computer Science and Engineering

Year : 2022

This work presents the impact of variation in gate length (Lg) through TCAD simulation software to analyze the transfer characteristics and RF/analog performances of the triple material gate (TMG) step drain (SD) FinFET device. Drain current and various figure of merit (FOM) like transconductance, transconductance generation factor (TGF), early voltage (VEA), intrinsic gain (Av), gate capacitance (Cgg), transconductance frequency product (TFP), cut-off frequency (Ft), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are systematically presented for evaluating the performance. It is observed that TMG SD FinFET is more convenient than conventional FinFET in terms of RF/analog performance. From the numerical analysis of simulated results, we could understand that TMG SD FinFET has 76.86% and 99.80% improvement in drain current and transconductance (Gmmax) as compared to conventional FinFET. For RF/analog circuits, most preferable peak values of TGF, GTFP and Av for gate length of 30 nm are 45.16 V^-1, 8.419×10¹⁵ Hz and 464.83 dB, and TFP, GFP and Ft for gate length 20 nm are 2.605 Hz, 2.338×10¹⁴ Hz, and 8.419×10¹⁵ Hz, respectively.

Cite this Research Publication : Rinku Rani Das, Arnab Majumder, Sumit Datta, RF/Analog Performance Enhancement of TMG SD FinFET, 2022 IEEE 19th India Council International Conference (INDICON), IEEE, 2022, https://doi.org/10.1109/indicon56171.2022.10039949